t4 - lds -0 286-1 , rev . 1 ( 4/22/13 ) ?201 3 microsemi corporation page 1 of 6 1n 6461 us ? 1n6468 us available on commercial versions voidless hermetically sealed unidirectional transient voltage suppressors qualified per mil - prf - 19500/ 551 qualified levels : jan, jantx, and jantxv description this surface mount series of 500 watt voidless hermetically sealed u nidirectional transient voltage suppressor s (tvs) are military qualified to mil - prf - 19500/551 and are ideal for high - reliability applications where a failure cannot be tolerated. w orking p eak ? s tandoff? v oltage s are available from 5.0 to 51.6 v olts. they are very robust, using a hard glass casing and intern al category 1 metallurgical bonds. these devices are also available in axial - leaded packages for thru - hole mounting. ?b ? sq - melf package also available in : ? b ? package (axial ? leaded) 1n6461 - 1n6468 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec regis tered 1n6 461 thru 1n6468 series . ? available as 500 watt p eak p ulse p ower (p pp ). ? working p eak ? s tandoff? v oltage (v wm ) from 5.0 to 51.6 volt. ? high surge current and peak pulse power provides transient voltage protection for sensitive circuits . ? triple - layer passivation. ? internal ? category 1 ? metallurgical bonds . ? voidless hermetically sealed glass package. ? jan, jantx, and jantxv qualification s available per mil - prf - 19500/ 551. other screening in reference to mil - prf - 19500 is also available. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only) . applications / benefits ? military and other high - reliability applications. ? extremely robust construction. ? esd and eft protection per iec61000 - 4 - 2 and iec61000- 4 - 4 respectively . ? protection from secondary effects of lightning pe r select levels in iec61000 -4 -5. ? square - end - cap terminals for easy placement . ? nonsensitive to esd per mil - std -750 m ethod 1020 . ? inherently radiation hard as described in microsemi ? micronote 050 ?. maximum ratings @ 25 oc parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 55 to +175 o c thermal resistance, junction to endcap r ? j ec 20 oc/w forward surge current @ 8.3 ms half - sine i fsm 80 a forward voltage @ 1 amp v f 1.5 v peak pulse power @ 10/1000 s p pp 500 w reverse power dissipation ( 1 ) p r 2.5 w solder temperature @ 10 s 260 o c notes: 1. derate at 50 mw/ o c (see figure 4 ). msc ? lawrence 6 lake street, lawrence, ma 01841 tel: 1 -800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com
t4 - lds -0 286-1 , rev . 1 ( 4/22/13 ) ?201 3 microsemi corporation page 2 of 6 1n 6461 us ? 1n6468 us mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs. ? termina ls : axial - leads are t in/ l ead over c opper. rohs compliant matte -ti n is available for commercial grade only. ? marking: body paint and part number . ? polarity: cathode band. ? tape & reel option: standard per eia - 296. contact factory for quantities. ? weight: approximately 750 m illigrams . ? see p ackage d imensions on last page. part nomenclature jan 1n6461 us e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv leve l cds (reference jans) blank = commercial jedec type number see electrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant melf package symbols & definitions symbol definition v ( br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature expressed in %/ c or mv/ c. v ( br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v wm rated wor king standoff voltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. i d standby current: the current through the device at rated stand - off vol tage. i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. a random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. v c clamping voltage: the voltage across the device in a region of low differential resistance during the application of an impulse current (i pp ) for a specified waveform. p pp peak pulse power. the rated random recurring peak impulse power or rated nonrepetitive peak impulse power. the impulse power is the maximum - rated value of the product of i pp and v c .
t4 - lds -0 286-1 , rev . 1 ( 4/22/13 ) ?201 3 microsemi corporation page 3 of 6 1n 6461 us ? 1n6468 us electrical characteristics type minimum break down voltage v (br) @ i (br) breakdown current i (br) rated working standoff voltage v wm maximum standby current i d @ v rwm maximum clamping voltage v c @ 10/1000 s maximum peak im pulse current i pp maximum temp. coef. of v (br) @ 8/20 s @ 10/1000 s volts ma v (pk) a v (pk) a (pk) a (pk) %/ o c 1n6461 us 5.6 25 5 3000 9.0 315 56 - 0 .03, +0.04 5 1n6462 us 6.5 20 6 2500 11.0 258 46 + 0.06 0 1n6463 us 13.6 5 12 500 22.6 125 22 + 0.085 1n6464 us 16.4 5 15 500 26.5 107 19 + 0.085 1n6465 us 27.0 2 24 50 41.4 69 12 +0 .096 1n6466 us 33.0 1 30.5 3 47.5 63 11 +0 .098 1n6467 us 43.7 1 40.3 2 63.5 45 8 +0 .101 1n6468 us 54.0 1 51.6 2 78.5 35 6 +0 .103
t4 - lds -0 286-1 , rev . 1 ( 4/22/13 ) ?201 3 microsemi corporation page 4 of 6 1n 6461 us ? 1n6468 us graphs pulse time (tp) figure 1 peak pulse power vs pulse time time (t) in milliseconds figure 2 1 0/1000 s current impulse waveform reverse peak pulse power (p pp ) in kw i pp ? peak pulse current - % i pp
t4 - lds -0 286-1 , rev . 1 ( 4/22/13 ) ?201 3 microsemi corporation page 5 of 6 1n 6461 us ? 1n6468 us graphs time (t) in milliseconds figure 3 8/20 s current impulse waveform t ? temperature - c figure 4 derating curve i pp ? peak pulse current - % i pp pe ak pulse power ( p pp ), current (i pp ), and dc power in percent of 25c ratin g
t4 - lds -0 286-1 , rev . 1 ( 4/22/13 ) ?201 3 microsemi corporation page 6 of 6 1n 6461 us ? 1n6468 us package dimensions no t es: 1 . d imension s ar e i n inches. 2 . m illimete r equi v alent s ar e gi v e n fo r informatio n onl y . 3 . referencing to dimension s, min imu m clearanc e o f glas s body t o mountin g surfac e o n all orientations. 4. dimensions are pre - solider dip. 5 . i n accordanc e w it h asm e y 14.5 m , diameter s ar e equi v alent t o x s y mbolog y . pad layout inch m illimeters m i n m a x m i n m a x bl 0.137 0.148 3.48 3.76 bd 0.200 0.225 5.08 5.72 ect 0.019 0.028 0.48 0.71 s 0.003 --- 0.08 --- inch millimeters a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 note: if mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement.
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